Chinaplas 2023 China International Rubber and Plastic Exhibition- Taizhou Huangyan Aoxu Mould Technology Co., Ltd.

Chinaplas 2023 China International Rubber and Plastic Exhibition

03-04-2023

"To provide intelligent technology and lightweight plastic components for power electronic devices, BASF is now introducing a type of polyanilamide (PPA) that is particularly suitable for manufacturing insulated gate bipolar transistor (IGBT) enclosures.". Ultraid capable of laser marking ® Advanced N3U41 G6 LS is a halogen-free flame retardant compound with excellent thermal stability, low water absorption, and excellent electrical properties. Its characteristic is that its relative leakage tracking index (CTI) exceeds 600V. Compared with materials used for IGBT to date, Ultraid ® Advanced N3U41 G6 LS has a lower creepage distance and better insulation performance, which helps IGBT achieve lightweight and miniaturization.

Due to its excellent chemical resistance and dimensional stability, Ultraid ® Advanced N products can enhance the strength, long-term performance, and reliability of IGBTs in the fields of electric vehicles, high-speed railways, solar and wind energy, and intelligent manufacturing, meeting customers' growing demand for energy conservation, weight reduction, and portability.

Insulated gate bipolar transistors play a role in fast and efficient switching in high-power circuits. IGBTs can be assembled into modules for higher voltage, greater current, and more compact electrical applications. Under severe conditions, the material must have excellent electrical insulation, flame retardancy, dimensional stability, and long-term heat and moisture resistance: Ultraid ® Advanced N is optimized to withstand higher temperatures and currents while maintaining its mechanical strength, making it sufficient to meet these challenges. It protects semiconductors from mechanical and environmental influences such as moisture, dust, and dirt.

UL certified, Ultraid ® Advanced N has excellent electrical RTI (Relative Thermal Index) values up to 150 ° C. In addition, it does not contain corrosive components such as halogens, thereby avoiding the risk of contact corrosion. In the production process of IGBT, BASF PPA can be injection molded together with metal components, and has good compatibility with semiconductor packaging materials.